MOCVD Growth of ZnSxSe1-xEpitaxial Layers Lattice-Matched to GaAs Using Alkyls of Zn, S and Se-Reference-Cited by-同舟云学术

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MOCVD Growth of ZnSxSe1-xEpitaxial Layers Lattice-Matched to GaAs Using Alkyls of Zn, S and Se

Published:1985-11-20 Issue:Part 2, No. 11 Volume:24 Page:L864-L866
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Mitsuhashi Hiroshi,Mitsuishi Iwao,Kukimoto Hiroshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 62 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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