Effect of Water Content of B2O3Encapsulant on Semi-Insulating LEC GaAs Crystal
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 20 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Boron and Nitrogen in GaAs and InP Melts Equilibrated with B2O3 Flux;MATERIALS TRANSACTIONS;2004
2. Behavior of Oxygen in Ga-As Melts with the Range of As Content up to 5 mass% Equilibrated with B2O3 Flux;MATERIALS TRANSACTIONS;2001
3. Activity of Ga2O3 in B2O3 Flux and Standard Free Energies of Formation of GaBO3 and InBO3;Materials Transactions, JIM;2000
4. Influence of pyrolytic boron nitride crucibles on GaAs crystal growth process and crystal properties;Journal of Crystal Growth;1995-08
5. Advanced arsenic purification and GaAs synthesis for improved reproducible growth of undoped semi-insulating GaAs;Journal of Crystal Growth;1994-09
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