Theoretical Considerations on Ion Channeling Effect through Silicide-Silicon Interface-Reference-Cited by-同舟云学术

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Theoretical Considerations on Ion Channeling Effect through Silicide-Silicon Interface

Published:1981-05 Issue:5 Volume:20 Page:843-848
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ishiwara Hiroshi,Saitoh Shuichi,Hikosaka Kohki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 47 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Physical Properties of Surface Silicides;Surface and Interface Science;2013-11-13

2. Influence of C incorporation on the initial growth of epitaxial NiSi2 on Si(100);APPL SURF SCI;2004

3. Formation of nickel disilicide using nickel implantation and rapid thermal annealing;Journal of Electronic Materials;2003-10

4. Defect-impurity engineering in implanted silicon;Physics-Uspekhi;2003-08-31

5. Study on the Dopedβ-FeSi 2 Obtained by Metal Vapor Vacuum Arc Ion Source Implantation and Post-Annealing;MRS Proceedings;2002

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