Study on the Dopedβ-FeSi 2 Obtained by Metal Vapor Vacuum Arc Ion Source Implantation and Post-Annealing

Abstract

Abstractβ-FeSi2 was firstly formed by implanting Si wafers with Fe ions at 50 kV to a dose of 5×1017/cm2in a strong current Metal Vapor Vacuum Arc (MEVVA) implanter. Secondly, Ti implantation was performed on these Fe as-implanted samples. The Fe + Ti implanted samples were furnace annealed in vacuum at temperatures ranging from 650 to 975°C. The XRD patterns of the annealed samples correspond to β-FeSi2 structure (namely β-Fe(Ti)Si2). When annealing was done above 1050°C, the β-Fe(Ti)Si2 transformed into α-Fe(Ti)Si2. This implies that introducing Ti stabilizes the β-FeSi2 phase. Resistance measurements were also performed.