Characterization of the Co-Silicide Penetration Depth into the Junction Area for 0.15 and Sub-0.15 Micron CMOS Technology-Reference-Cited by-同舟云学术

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Characterization of the Co-Silicide Penetration Depth into the Junction Area for 0.15 and Sub-0.15 Micron CMOS Technology

Published:2002-04-30 Issue:Part 1, No. 4B Volume:41 Page:2445-2449
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Lee Hi-Deok,Bae Mi-Suk,Ji Hee-Hwan,Lee Key-Min,Park Seong-Hyun,Jang Myoung-Jun,Lee Joo-Hyoung,Yoon Ki-Seok,Choi Jung-Hoon,Park Geun-Suk,Kang Keun-Koo,Park Young-Jin

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/41/i=4S/a=2445/pdf

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of Metals on Silicon Devices and Circuits;Metal Impurities in Silicon- and Germanium-Based Technologies;2018

2. Source of Metals in Si and Ge Crystal Growth and Processing;Metal Impurities in Silicon- and Germanium-Based Technologies;2018

3. Phase State Analysis of Nickel Silicides in Complementary Metal–Oxide–Semiconductor Device Using Plasmon Energy Map;Japanese Journal of Applied Physics;2009-01-20

4. Impact of an As implant before CoSi2 formation on the sheet resistance and junction breakdown voltage;Microelectronic Engineering;2006-11

5. Interface-Trap-Assisted Emission in Si Complementary Metal–Oxide–Semiconductor Light-Emitting Devices;Japanese Journal of Applied Physics;2005-06-10

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