Energy Barrier for Valence Electrons at SiO2/Si(111) Interface
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/41/i=3A/a=L223/pdf
Cited by 20 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Roles of excess minority carrier recombination and chemisorbed O2 species at SiO2/Si interfaces in Si dry oxidation: Comparison between p-Si(001) and n-Si(001) surfaces;The Journal of Chemical Physics;2022-12-21
2. Uncertainty Evaluation in Measurement of Thickness of SiO2/Si Using X-Ray Photoelectron Spectroscopy;Advanced Materials Research;2014-04
3. X-ray photoelectron spectroscopy measurement of the Schottky barrier at the SiC(N)/Cu interface;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2011-09
4. Quantitative Discussion on Electron-Hole Universal Tunnel Mass in Ultrathin Dielectric of Oxide and Oxide-Nitride;ECS Transactions;2011-04-25
5. Universal Tunnel Mass and Charge Trapping in $[( \hbox{SiO}_{2})_{1-x} (\hbox{Si}_{3}\hbox{N}_{4})_{x}]_{1-y}\hbox{Si}_{y}$ Film;IEEE Transactions on Electron Devices;2010-05
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