Contact Resistivity between an Al Metal Line and an Indium Tin Oxide Line of Thin Film Transistor Liquid Crystal Displays-Reference-Cited by-同舟云学术

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Contact Resistivity between an Al Metal Line and an Indium Tin Oxide Line of Thin Film Transistor Liquid Crystal Displays

Published:2002-02-15 Issue:Part 1, No. 2A Volume:41 Page:791-794
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Lee Ho-Nyeon,Park Jae-Chel,Kim Hyun-Jin,Lee Won-Geon

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/41/i=2R/a=791/pdf

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Efficient Dual-Polarized Electro-Optically Tunable Microresonators by Utilization of Ultra-Thin Transparent Electrode;Journal of Lightwave Technology;2020-12-15

2. Spectro-Electrochemical of Detection Anthracene at Electrodeposited Polyamic Acid Thin Films;Journal of Nano Research;2016-11

3. Effects of Ion Implantation Doping on the Characteristics of Amorphous Indium Gallium Zinc Oxide Thin Films;Science of Advanced Materials;2016-02-01

4. Low temperature synthesis of Al doped ZnO thin films by facing target sputtering;Surface and Coatings Technology;2013-08

5. Electrical Conduction across the Direct Contact between Indium–Tin Oxide and Al–Ni Alloy Layers;Japanese Journal of Applied Physics;2010-11-22

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