High-Temperature Thick Al Wire Bonding Technology for High-Power Modules-Reference-Cited by-同舟云学术

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High-Temperature Thick Al Wire Bonding Technology for High-Power Modules

Published:2002-08-15 Issue:Part 1, No. 8 Volume:41 Page:5030-5033
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Komiyama Takao,Chonan Yasunori,Onuki Jin,Koizumi Masahiko,Shigemura Tatsuya

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/41/i=8R/a=5030/pdf

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Anisotropic Grain Growth of Al-Si Wire Under Electromigration Tests in Power Devices;JOM;2023-07-06

2. Effect of post bonding annealing on the reliability of Al based wire bondings in IGBTs;Microelectronics Reliability;2022-11

3. Electrothermal coupling analysis and experimental verification for wirebond devices;Transactions of the Canadian Society for Mechanical Engineering;2018-09-01

4. A review on the mechanisms of ultrasonic wedge-wedge bonding;Journal of Materials Processing Technology;2017-07

5. Physics-of-Failure, Condition Monitoring, and Prognostics of Insulated Gate Bipolar Transistor Modules: A Review;IEEE Transactions on Power Electronics;2015-05

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