Reactive Ion Beam Etching of GaN and AlGaN/GaN for Nanostructure Fabrication Using Methane-Based Gas Mixtures-Reference-Cited by-同舟云学术

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Reactive Ion Beam Etching of GaN and AlGaN/GaN for Nanostructure Fabrication Using Methane-Based Gas Mixtures

Published:2002-04-30 Issue:Part 1, No. 4B Volume:41 Page:2689-2693
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Endo Makoto,Jin Zhi,Kasai Seiya,Hasegawa Hideki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/41/i=4S/a=2689/pdf

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Elevated-temperature etching of gallium nitride (GaN) in dual-frequency capacitively coupled plasma of CH4/H2 at 300–500 °C;Vacuum;2018-10

2. Effect of UV Irradiation on Ar-Plasma Etching Characteristics of GaN;ECS Journal of Solid State Science and Technology;2013

3. GaN HEMT Technology;Springer Series in Materials Science;2011-11-24

4. Heterometal Assembly in Dendritic Polyphenylazomethines;Bulletin of the Chemical Society of Japan;2007-08-15

5. Straight and Smooth Etching of GaN (1\bar100) Plane by Combination of Reactive Ion Etching and KOH Wet Etching Techniques;Japanese Journal of Applied Physics;2006-05-09

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