Effects of Initial Thermal Cleaning Treatment of a Sapphire Substrate Surface on the GaN Epilayer-Reference-Cited by-同舟云学术

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Effects of Initial Thermal Cleaning Treatment of a Sapphire Substrate Surface on the GaN Epilayer

Published:1999-05-15 Issue:Part 1, No. 5A Volume:38 Page:2721-2724
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kim Jong-Hee,Choi Sung Chul,Choi Ji,Kim Ki Soo,Yang Gye,Hong Chang-Hee,Lim Kee Young,Lee Hyung Jae

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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4. Effect of substrate surface pretreatment and annealing treatment on morphology, structure, optical and electrical properties of sputtered ZnO films;Superlattices and Microstructures;2015-07

5. High-temperature annealing effect of α-Al2O3 (0001) substrates with nominal 0.25° miscut toward the a-plane $${\mathbf{ \left( {11\overline{2} 0} \right)}}$$ 11 2 ¯ 0 on ZnO films grown by MOCVD;Applied Physics A;2015-06-09

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