Red Emission from Eu-Doped GaN Studied by Photoluminescence and Photo-Calorimetric Spectroscopy-Reference-Cited by-同舟云学术

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Red Emission from Eu-Doped GaN Studied by Photoluminescence and Photo-Calorimetric Spectroscopy

Published:1999-11-15 Issue:Part 2, No. 11B Volume:38 Page:L1306-L1308
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Maruyama Takahiro,Sasaki Hitomi,Morishima Shinichi,Akimoto Katsuhiro

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A novel hybrid pulsed laser deposition/metalorganic vapour deposition method to form rare-earth activated GaN;Journal of Physics D: Applied Physics;2008-05-19

2. Europium-Doped Gallium Nitride Prepared by Na Flux Method;Japanese Journal of Applied Physics;2006-02-10

3. Optical processes of red emission from Eu doped GaN;Science and Technology of Advanced Materials;2005-01-01

4. Growth and characterisation of Eu doped GaN thin films;Superlattices and Microstructures;2004-10

5. Defects in Eu- and Tb-doped GaN probed using a monoenergetic positron beam;Journal of Applied Physics;2003-05

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