Influence of Sapphire Nitridation on Properties of Indium Nitride Prepared by Metalorganic Vapor Phase Epitaxy-Reference-Cited by-同舟云学术

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Influence of Sapphire Nitridation on Properties of Indium Nitride Prepared by Metalorganic Vapor Phase Epitaxy

Published:1999-02-15 Issue:Part 1, No. 2A Volume:38 Page:645-648
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Pan Yung-Chung,Lee Wen-Hsiung,Shu Chen-Ke,Lin Heng-Ching,Chiang Chung-I,Chang Horng,Lin Deng-Sung,Lee Ming-Chih,Chen Wei-Kuo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Morphology, Crystalline Quality, and Optical Properties of MOCVD-grown InN/InAlN Heterostructures;2020 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM);2020-10-11

2. Improvement of luminescence properties of InN by optimization of multi-step deposition on sapphire;Thin Solid Films;2019-06

3. A comparative study of InN growth on quartz, silicon, C-sapphire and bulk GaN substrates by RF magnetron sputtering;Journal of Materials Science: Materials in Electronics;2017-03-24

4. Structural and electronic properties of InN epitaxial layer grown on c-plane sapphire by chemical vapor deposition technique;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2016-09

5. Surface and crystal structure of nitridated sapphire substrates and their effect on polar InN layers;Applied Surface Science;2014-07

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