Structural and electronic properties of InN epitaxial layer grown on c-plane sapphire by chemical vapor deposition technique
Author:
Affiliation:
1. Department of Physics, Indian Institute of Technology, Bombay, Mumbai 400076, India
Funder
Department of Science and Technology, Ministry of Science and Technology (DST)
Council of Scientific and Industrial Research (CSIR)
Publisher
American Vacuum Society
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Link
http://avs.scitation.org/doi/pdf/10.1116/1.4955270
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1. Plasma-Assisted Molecular Beam Epitaxy of In-Rich InGaN: Growth Optimization for Near-IR Lasing;ECS Journal of Solid State Science and Technology;2022-01-01
2. Understanding Negative Photoconductivity Observed in c‐Orientated InN Epitaxial Layer;physica status solidi (b);2020-08-31
3. Generation of light-induced surface current in c-oriented InN epitaxial layers;Applied Physics A;2019-01-08
4. Experimental evidence of a very thin superconducting layer in epitaxial indium nitride;Superconductor Science and Technology;2018-11-29
5. Network of vertically c-oriented prismatic InN nanowalls grown on c-GaN/sapphire template by chemical vapor deposition technique;Journal of Crystal Growth;2018-05
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