Design and Experimental Characteristics of n-Si/CaF2/Au Hot Electron Emitter for Use in Scanning Hot Electron Microscopy-Reference-Cited by-同舟云学术

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Design and Experimental Characteristics of n-Si/CaF2/Au Hot Electron Emitter for Use in Scanning Hot Electron Microscopy

Published:1999-08-15 Issue:Part 1, No. 8 Volume:38 Page:4887-4892
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Zhang Bingyang,Furuya Kazuhito,Ikeda Yoshihiro,Kikegawa Nobutaka

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis of single- and double-barrier tunneling diode structures using ultrathin CaF2/CdF2/Si multilayered heterostructures grown on Si;Japanese Journal of Applied Physics;2015-03-13

2. Calcium Fluoride Barrier Layer in Tunnel Emitter Phototransistor;Acta Physica Polonica A;2012-01

3. The phototransistor action of a reverse-biased Au/CaF2[3–7 ML]/n-Si(1 1 1) structure;Semiconductor Science and Technology;2010-08-05

4. Electrical characterization and modeling of the Au/CaF2/nSi(111) structures with high-quality tunnel-thin fluoride layer;Journal of Applied Physics;2009-04-15

5. Static current-voltage characteristics of Au/CaF2/n-Si(111) MIS tunneling structures;Semiconductors;2008-11

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