Influence of Strain Compensation on Structural and Electrical Properties of InAlAs/InGaAs HEMT Structures Grown on InP-Reference-Cited by-同舟云学术

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Influence of Strain Compensation on Structural and Electrical Properties of InAlAs/InGaAs HEMT Structures Grown on InP

Published:1999-02-28 Issue:Part 1, No. 2B Volume:38 Page:1169-1173
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Letartre Xavier,Rojo-Romeo Pedro,Tardy Jacques,Bejar Moez,Gendry Michel,Py Marcel André,Beck Matthias,Bühlmann Hans Jörg,Ren Lin,Villar Constantino,Sanz-Hervas Alfredo,Serrano Jose Javier,Blanco Jose Maria,Aguilar Miguel,Marty Olivier,Soulière Véronique,Monteil Yves

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Strain on Electron Transport and Quantum Lifetimes in In_xGa_1−xAs/In_0.52Al_0.48As Modulation Doped Double Quantum Well‐Based High Electron Mobility Transistor Structures;physica status solidi (b);2024-03-03

2. Strain compensation in In[sub 0.75]Ga[sub 0.25]As/InP pseudomorphic high electron mobility transistors using strained InAlAs buffers;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2000

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