A High-Temperature Thermodynamic Model for Metalorganic Vapor Phase Epitaxial Growth of InGaN-Reference-Cited by-同舟云学术

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A High-Temperature Thermodynamic Model for Metalorganic Vapor Phase Epitaxial Growth of InGaN

Published:1999-09-15 Issue:Part 1, No. 9A Volume:38 Page:4958-4961
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ou Jehn,Pan Yung-Chung,Lee Wen-Hsiung,Shu Chen-Ke,Lin Heng-Ching,Lee Ming-Chih,Chen Wen-Hsiung,Chiang Chung-I,Chang Horng,Chen Wei-Kuo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Crying Wulff on vapor–solid distributions of crystallogen chemical vapor deposition via p-block element hydride thermal decomposition;Journal of Crystal Growth;2023-04

2. Plasma profiling time-of-flight mass spectrometry for fast elemental analysis of semiconductor structures with depth resolution in the nanometer range;Semiconductor Science and Technology;2020-02-11

3. Indium incorporation efficiency and critical layer thickness of (202¯1) InGaN layers on GaN;Applied Physics Letters;2012-11-12

4. Observations of gas-phase nanoparticles during InGaN metal-organic chemical vapor deposition;Applied Physics Letters;2008-10-27

5. The influence of ammonia pre-heating to InGaN films grown by TPIS-MOCVD;Journal of Crystal Growth;2003-01

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