Indium incorporation efficiency and critical layer thickness of (202¯1) InGaN layers on GaN-Reference-Cited by-同舟云学术

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Indium incorporation efficiency and critical layer thickness of (202¯1) InGaN layers on GaN

Published:2012-11-12 Issue:20 Volume:101 Page:202102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ploch Simon,Wernicke Tim,Frentrup Martin,Pristovsek Markus,Weyers Markus,Kneissl Michael

Funder

Deutsche Forschungsgemeinschaft

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4767336

Reference22 articles.

1. Investigation of long wavelength green InGaN lasers on c -plane GaN up to 529 nm continuous wave operation

2. Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells

3. Strain-induced polarization in wurtzite III-nitride semipolar layers

4. Low Threshold Current Density InGaN Based 520–530 nm Green Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates

5. AlGaN-Cladding Free Green Semipolar GaN Based Laser Diode with a Lasing Wavelength of 506.4 nm

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2. The influence of water and ethanol adsorption on the optical blinking in InGaN quantum wells;Semiconductor Science and Technology;2022-08-01

3. Deep defects in InGaN LEDs: modeling the impact on the electrical characteristics;Gallium Nitride Materials and Devices XVII;2022-03-05

4. InxGa1-xN/GaN double heterojunction solar cell optimization for high temperature operation;Solar Energy Materials and Solar Cells;2022-01

5. Effects of quantum-well indium content on deep defects and reliability of InGaN/GaN light-emitting diodes with under layer;Journal of Physics D: Applied Physics;2021-09-28

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