Doping of Trench Side-Walls Using an Arsenic Planar-Type Solid-Diffusion Source (S-D Source) and Analysis of Doping Uniformity by Secondary Ion Mass Spectroscopy (SIMS)-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Doping of Trench Side-Walls Using an Arsenic Planar-Type Solid-Diffusion Source (S-D Source) and Analysis of Doping Uniformity by Secondary Ion Mass Spectroscopy (SIMS)

Published:1989-10-20 Issue:Part 2, No. 10 Volume:28 Page:L1866-L1869
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Matsuo Naoto,Okuda Seiji,Hirofuji Yuichi,Tsukamoto Kazuyoshi,Iwasaki Hiroshi,Takemoto Toyoki,Yoshioka Yoshiaki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Process Considerations for selective doping of poly-Si thin films with spin-on dopants and nickel silicide formation for planar thermoelectric devices;Materials Science in Semiconductor Processing;2022-11

2. High-Speed Rotating-Disk Chemical Vapor Deposition Process forIn-SituArsenic-Doped Polycrystalline Silicon Films;Japanese Journal of Applied Physics;2005-11-09

3. Analytical method of gigabit trench doping uniformity by secondary ion mass spectrometry;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1996-07

4. Higher-integrated spread-type stacked capacitor and its suitable arsenic solid-diffusion method;Microelectronics Journal;1996-02

5. Arsenic gas-phase doping of polysilicon;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1994-05

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP