Higher-integrated spread-type stacked capacitor and its suitable arsenic solid-diffusion method-Reference-Cited by-同舟云学术

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Higher-integrated spread-type stacked capacitor and its suitable arsenic solid-diffusion method

Published:1996-02 Issue:1 Volume:27 Page:73-77
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Matsuo N.,Miyoshi T.,Matsubara K.

Publisher

Elsevier BV

Subject

General Engineering

Reference10 articles.

1. 3-dimensional stacked capacitor cell for 16M and 64M DRAMs;Ema;Tech. Digest IEDM,1988

2. Novel stacked capacitor cell for 64Mb DRAM;Wakamiya,1989

3. A spread stacked capacitor (SSC) cell for 64Mb DRAMs;Inoue;Tech. Digest IEDM,1989

4. Semiconductor memory device;Matsuo,1989

5. Doping of trench side-walls using an arsenic planar-type solid-diffusion source and analysis of doping uniformity by secondary ion mass spectroscopy;Matsuo;Jpn. J. Appl. Phys.,1989

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dielectric breakdown behavior of ferroelectric HfO₂ capacitors by constant voltage stress studied by in situ laser-based photoemission electron microscopy;Japanese Journal of Applied Physics;2024-02-05

2. Analytical method of gigabit trench doping uniformity by secondary ion mass spectrometry;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1996-07

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