Optoelectric Characteristics of a-Si/a-SiC Superlattice-Structure Films and Devices Fabricated by the Photo-CVD Method-Reference-Cited by-同舟云学术

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Optoelectric Characteristics of a-Si/a-SiC Superlattice-Structure Films and Devices Fabricated by the Photo-CVD Method

Published:1989-10-20 Issue:Part 1, No. 10 Volume:28 Page:1769-1775
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Tarui Hisaki,Matsuyama Takao,Okamoto Shingo,Takahama Tuyoshi,Nakamura Noboru,Tsuda Shinya,Nakano Shoichi,Ohnishi Michitoshi,Kuwano Yukinori

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Size-controlled nc-Si:H/a-SiC:H quantum dots superlattice and its application to hydrogenated amorphous silicon solar cells;Solar Energy Materials and Solar Cells;2016-12

2. Electroluminescence characteristics and current-conduction mechanism of a-SiC:H p-i-n thin-film light-emitting diodes with barrier layer inserted at p-i interface;IEEE Transactions on Electron Devices;1994

3. Spectrally resolved electroluminescence and photoluminescence in a-Si:H pin-diodes compared with optical multilayer calculations;Journal of Non-Crystalline Solids;1993-12

4. Physical problems in solar energy;Uspekhi Fizicheskih Nauk;1991

5. On the role of the substrate position in the CO2 laser CVD of amorphous hydrogenated silicon;Applied Surface Science;1990-12

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