Reduction of DX Center Concentration in Al0.3Ga0.7As with In
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Deep‐level‐free AlxGa1−xAs (x=0.22) layer grown by metalorganic chemical vapor deposition;Applied Physics Letters;1995-05-15
2. Very Low Deep Level AlxGa1−xAs (x=0.22) Layer Grown by Metalorganic Chemical Vapor Deposition;MRS Proceedings;1995
3. Techniques to minimizeDXcenter deleterious effects in III‐V device performance;Journal of Applied Physics;1993-05-15
4. Defect characterization in GaAlInAs alloys;Journal of Applied Physics;1992-10-15
5. DXcenter electron occupancy under hydrostatic pressure in Si‐doped Iny(Ga1−xAlx)1−yAs alloys;Applied Physics Letters;1992-10-12
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