Deep‐level‐free AlxGa1−xAs (x=0.22) layer grown by metalorganic chemical vapor deposition-Reference-Cited by-同舟云学术

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Deep‐level‐free AlxGa1−xAs (x=0.22) layer grown by metalorganic chemical vapor deposition

Published:1995-05-15 Issue:20 Volume:66 Page:2745-2747
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Huang Z. C.,Yang Bing,Chen H. K.,Chen J. C.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.113695

Reference13 articles.

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Incorporation of optically active erbium into GaAs using the novel precursor tris(3,5-di-tert-butylpyrazolato)bis(4-tert-butylpyridine)erbium;Journal of Applied Physics;1999-02

2. Erbium-doped GaAs grown using the novel precursor tris(3,5-di-tert-butylpyrazolato)bis(4-tert-butylpyridine)erbium;Journal of Crystal Growth;1998-12

3. High performance Schottky contacts on Se-doped AlxGa1−xAs by cryogenic processing;Solid-State Electronics;1997-12

4. Effects of trimethylindium on the purity of In0.5Al0.5P and In0.5Al0.5as epilayers grown by metalorganic chemical vapor deposition;Journal of Electronic Materials;1997-04

5. Regrowth of high-quality AlGaAs and AlGaInP layers and quantum well structures on Se-doped AlGaAs by MOVPE;Journal of Crystal Growth;1997-01

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