Incorporation of optically active erbium into GaAs using the novel precursor tris(3,5-di-tert-butylpyrazolato)bis(4-tert-butylpyridine)erbium
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.369179
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1. Mechanism and performance of forward and reverse bias electroluminescence at 1.54 μm from Er-doped Si diodes
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3. Luminescence of erbium implanted in various semiconductors: IV, III-V and II-VI materials
4. Molecular-beam epitaxial growth and characterization of erbium-doped GaAs and AlGaAs
5. Properties and Growth of MBE Grown Erbium Doped Gallium Arsenide Co-Doped with Selenium
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1. Room Temperature NUV‐To‐NIR Up‐ and Down‐Conversion Photoluminescence in Erbium‐Doped GaAs;Advanced Optical Materials;2023-11-20
2. Replacing Mercury: Syntheses of Lanthanoid Pyrazolates from Free Lanthanoid Metals, Pentafluorophenylsilver, and Pyrazoles, Aided by a Facile Synthesis of Polyfluoroarylsilver Compounds;European Journal of Inorganic Chemistry;2019-02-06
3. The Synthesis, Structures and Polymorphism of the Dimeric Trivalent Rare‐Earth 3,5‐Dimethylpyrazolate Complexes [Ln(Me 2 pz) 3 (thf)] 2;European Journal of Inorganic Chemistry;2014-04-04
4. Metallic Materials Deposition: Metal-Organic PrecursorsBased in part on the article Metallic Materials Deposition: Metal-Organic Precursors by Herbert D. Kaesz, Alfred Zinn, & Lutz Brandt which appeared in theEncyclopedia of Inorganic Chemistry, First Edition.;Encyclopedia of Inorganic and Bioinorganic Chemistry;2011-12-15
5. Trivalent Rare Earth Complexes of the Unsymmetrical 3‐(2′‐Thienyl)‐5‐(trifluoromethyl)pyrazolate Ligand;European Journal of Inorganic Chemistry;2011-07-19
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