Scanning Tunneling Microscopy Study of Silicide Structure on Si(110) Surface
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Fabrication and characterization of periodic arrays of epitaxial Ni-silicide nanocontacts on (110)Si;Applied Surface Science;2015-07
2. Manifestations of strain–relaxation in the structure of nano-sized Co-2 × 2 islands grown on Ag/Ge(111)-√3 × √3 surface;Thin Solid Films;2012-06
3. Anomalous Nickel Silicide Encroachment in n-Channel Metal–Oxide–Semiconductor Field-Effect Transitors on Si(110) Substrates and Its Suppression by Si+Ion-Implantation Technique;Japanese Journal of Applied Physics;2009-06-22
4. Pd-Induced Surface Reconstructions of Si(110) Studied by Scanning Tunneling Microscopy and Low-Energy Electron Diffraction;Japanese Journal of Applied Physics;2007-04-05
5. Atomic defects generated by hydrogen on Si(110) surface as revealed by scanning tunneling microscopy;Materials Science and Engineering: B;2002-04
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