Effects of Back-Channel Etching on the Performance of a-Si:H Thin-Film Transistors-Reference-Cited by-同舟云学术

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Effects of Back-Channel Etching on the Performance of a-Si:H Thin-Film Transistors

Published:1998-07-15 Issue:Part 1, No. 7A Volume:37 Page:3904-3909
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ando Masahiko,Wakagi Masatoshi,Minemura Tetsuroh

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhanced thin-film transistor driven high-aperture in-plane switching liquid crystal displays without common line and black matrix;Scientific Reports;2021-06-01

2. Hydrogenated Amorphous Silicon Thin-Film Transistors (a-Si:H TFTs);Handbook of Visual Display Technology;2016

3. Effects of interface and bulk properties of gate-dielectric on the performance and stability of hydrogenated amorphous silicon thin-film transistors;Journal of Applied Physics;2015-12-21

4. Hydrogenated Amorphous Silicon Thin-Film Transistors (a-Si:H TFTs);Handbook of Visual Display Technology;2014

5. A delta-doped amorphous silicon thin-film transistor with high mobility and stability;Journal of the Korean Physical Society;2012-12

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