A delta-doped amorphous silicon thin-film transistor with high mobility and stability-Reference-Cited by-同舟云学术

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A delta-doped amorphous silicon thin-film transistor with high mobility and stability

Published:2012-12 Issue:11 Volume:61 Page:1835-1839
ISSN:0374-4884
Container-title:Journal of the Korean Physical Society
language:en
Short-container-title:Journal of the Korean Physical Society

Author:

Kim Pyunghun,Lee Kyung Min,Lee Eui-Wan,Jo Younjung,Kim Do-Hyung,Kim Hong-jae,Yang Key Young,Son Hyunji,Choi Hyun Chul

Publisher

Korean Physical Society

Subject

General Physics and Astronomy

Link

http://link.springer.com/content/pdf/10.3938/jkps.61.1835.pdf

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Stacked p‐Type Low‐Temperature Polycrystalline Silicon Thin‐Film Transistor for Future Display Applications;Advanced Materials Technologies;2022-07-07

2. An analytical model of the surface-potential-based source-pocket-doped cylindrical-gate tunnel FET with a work-function-modulated metal gate;Journal of Computational Electronics;2020-02-14

3. Impact of source-pocket engineering on device performance of dielectric modulated tunnel FET;Superlattices and Microstructures;2018-12

4. Analytical modelling of work‐function modulated delta‐doped TFET to improve analogue performance;IET Circuits, Devices & Systems;2018-03-29

5. Current switching ratio optimization using dual pocket doping engineering;Superlattices and Microstructures;2018-01

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