Analytical modelling of work‐function modulated delta‐doped TFET to improve analogue performance-Reference-Cited by-同舟云学术

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Analytical modelling of work‐function modulated delta‐doped TFET to improve analogue performance

Published:2018-03-29 Issue:4 Volume:12 Page:374-381
ISSN:1751-858X
Container-title:IET Circuits, Devices & Systems
language:en
Short-container-title:IET Circuits, Devices & Systems

Author:

Panda Subhrasmita¹,Dash Sidhartha²,Mishra Guru Prasad²

Affiliation:

1. Device Simulation LabDepartment of Electronics & Instrumentation EngineeringSiksha ‘O’ Anusandhan University, KhandagiriBhubaneswarIndia

2. Department of Electronics & Communication EngineeringSiksha ‘O’ Anusandhan University, KhandagiriBhubaneswarIndia

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering,Control and Systems Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/iet-cds.2017.0135

Reference39 articles.

1. Tunnel FET technology: a reliability perspective;Datta S.;Solid State Electron.,2014

2. Effect of Drain Doping Profile on Double-Gate Tunnel Field-Effect Transistor and its Influence on Device RF Performance

3. Low-subthreshold-swing tunnel transistors

4. Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec

5. A low subthreshold swing tunneling field effect transistor for next generation low power CMOS applications

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