Reactive Ion Beam Etching and Overgrowth Process in the Fabrication of InGaN Inner Stripe Laser Diodes-Reference-Cited by-同舟云学术

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Reactive Ion Beam Etching and Overgrowth Process in the Fabrication of InGaN Inner Stripe Laser Diodes

Published:1998-03-30 Issue:Part 1, No. 3B Volume:37 Page:1470-1473
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Nunoue Shin-ya,Yamamoto Masahiro,Suzuki Mariko,Nozaki Chiharu,Nishio Joji,Sugiura Lisa,Onomura Masaaki,Itaya Kazuhiko,Ishikawa Masayuki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Observation of weak carrier localization in green emitting InGaN/GaN multi-quantum well structure;Journal of Applied Physics;2015-04-14

2. Photonic Devices;Wide Bandgap Semiconductors;2007

3. Micro‐zone optical measurements on GaN based nitride/air distributed Bragg reflector (DBR) mirrors made by focused ion beam milling;physica status solidi (c);2004-09

4. Comparison of planar inductively coupled plasma etching of GaAs in BCl3, BCl3/Ar, and BCl3/Ne;Applied Surface Science;2004-06

5. Etching of As- and P-based III–V semiconductors in a planar inductively coupled BCl3/Ar plasma;Journal of Electronic Materials;2004-04

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