C60Resist Mask of Electron Beam Lithography for Chlorine-Based Reactive Ion Beam Etching
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Chlorine-based inductively coupled plasma etching of GaAs wafer using tripodal paraffinic triptycene as an etching resist mask;Japanese Journal of Applied Physics;2016-05-10
2. Microfabrication of Si and GaAs by Plasma Etching Process Using Bacterial Cells as an Etching Mask Material;Japanese Journal of Applied Physics;2012-08-01
3. Microfabrication of Si and GaAs by Plasma Etching Process Using Bacterial Cells as an Etching Mask Material;Japanese Journal of Applied Physics;2012-07-18
4. The Role of Secondary Electrons in Forming the Image of Electron Nanoprobe;Fullerenes, Nanotubes and Carbon Nanostructures;2008-09
5. Fullerite C60 as electron-beam resist for ‘dry’ nanolithography;Microelectronic Engineering;2003-09
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