Gate Oxide Defects in MOSLSIs and Octahedral Void Defects in Czochralski Silicon
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Characterization of Epitaxial Si Films Grown by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Cylindrical Rotary Electrode;Japanese Journal of Applied Physics;2006-04-25
2. Efficient Detection and Size Determination of Crystal Originated “Particles” (COPs) on Silicon Wafer Surface Using Optical Scattering Technique Integrated to an Atomic Force Microscope;IEEE Transactions on Semiconductor Manufacturing;2004-08
3. High-rate growth of epitaxial silicon at low temperatures (530–690 °C) by atmospheric pressure plasma chemical vapor deposition;Thin Solid Films;2003-11
4. Issues for the larger diameter epitaxial wafer;Microelectronic Engineering;2001-05
5. Epitaxial Growth with Monosilane Gas on a 400 mm Diameter Silicon Wafer;Electrochemical and Solid-State Letters;2001
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