Efficient Detection and Size Determination of Crystal Originated “Particles” (COPs) on Silicon Wafer Surface Using Optical Scattering Technique Integrated to an Atomic Force Microscope-Reference-Cited by-同舟云学术

Efficient Detection and Size Determination of Crystal Originated “Particles” (COPs) on Silicon Wafer Surface Using Optical Scattering Technique Integrated to an Atomic Force Microscope

Published:2004-08 Issue:3 Volume:17 Page:422-431
ISSN:0894-6507
Container-title:IEEE Transactions on Semiconductor Manufacturing
language:en
Short-container-title:IEEE Trans. Semicond. Manufact.

Author:

Lee W.-P.,Yow H.-K.,Tou T.-Y.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Industrial and Manufacturing Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/66/29262/01321140.pdf?arnumber=1321140

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High Precision Image Stabilization Control for Wafer Defect Inspection;2023 IEEE 13th International Conference on CYBER Technology in Automation, Control, and Intelligent Systems (CYBER);2023-07-11

2. Nano−Micro Characterization of Defects on Silicon Surfaces: An Industrial Perspective of Metrology Challenges;physica status solidi (a);2021-12-24

3. Surface Defect Detection on Optical Devices Based on Microscopic Dark-Field Scattering Imaging;Strojniški vestnik – Journal of Mechanical Engineering;2015-01-15

4. Characterization of Crystal-Originated Particles in Silicon Nitride Doped, CZ-Grown Silicon Wafers;Journal of The Electrochemical Society;2006

5. Reliable matching of 300 mm defect inspection tools @ sub 60 nm defect size;ISSM 2005, IEEE International Symposium on Semiconductor Manufacturing, 2005.;2005