Mechanism of Radical Control in Capacitive RF Plasma for ULSI Processing-Reference-Cited by-同舟云学术

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Mechanism of Radical Control in Capacitive RF Plasma for ULSI Processing

Published:1998-04-30 Issue:Part 1, No. 4B Volume:37 Page:2394-2399
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Tatsumi Tetsuya,Hayashi Hisataka,Morishita Satoshi,Noda Shuichi,Okigawa Mitsuru,Itabashi Naoshi,Hikosaka Yukinobu,Inoue Masami

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

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