Threading Dislocation Blocking in Metamorphic InGaAs/GaAs for Growing High-Quality In$_{0.5}$Ga$_{0.5}$As and In$_{0.3}$Ga$_{0.7}$As on GaAs Substrate by Using Metal Organic Chemical Vapor Deposition-Reference-Cited by-同舟云学术

Threading Dislocation Blocking in Metamorphic InGaAs/GaAs for Growing High-Quality In$_{0.5}$Ga$_{0.5}$As and In$_{0.3}$Ga$_{0.7}$As on GaAs Substrate by Using Metal Organic Chemical Vapor Deposition

Published:2012-04-17 Issue:5 Volume:5 Page:055503
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Nguyen Hong-Quan,Chang Edward Yi,Yu Hung-Wei,Trinh Hai-Dang,Dee Chang-Fu,Wong Yuen-Yee,Hsu Ching-Hsiang,Tran Binh-Tinh,Chung Chen-Chen

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/5/i=5/a=055503/pdf

Reference17 articles.

1. Low temperature growth of InGaAs layers on misoriented GaAs substrates by metalorganic vapor phase epitaxy

2. Future technology pathways of terrestrial III–V multijunction solar cells for concentrator photovoltaic systems

3. Deep levels in virtually unstrained InGaAs layers deposited on GaAs

4. New Mechanism for Dislocation Blocking in Strained Layer Epitaxial Growth

5. Dislocation dynamics in relaxed graded composition semiconductors

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