Efficiency Droop Characteristics in InGaN-Based Near Ultraviolet-to-Blue Light-Emitting Diodes
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/5/i=2/a=022102/pdf
Reference15 articles.
1. Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes
2. Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer
3. Blue and near-ultraviolet light-emitting diodes on free-standing GaN substrates
4. Defect related issues in the “current roll-off” in InGaN based light emitting diodes
5. Investigation of the Nonthermal Mechanism of Efficiency Rolloff in InGaN Light-Emitting Diodes
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