High-Temperature Growth of GaP on Si Substrates by Metalorganic Vapor Phase Epitaxy-Reference-Cited by-同舟云学术

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High-Temperature Growth of GaP on Si Substrates by Metalorganic Vapor Phase Epitaxy

Published:2009-01-20 Issue:1 Volume:48 Page:011102
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Takano Yasushi,Morizumi Kenta,Watanabe Satoshi,Masuda Hiroyuki,Okamoto Takuya,Noda Kunihiro,Fukuda Shinya,Ozeki Tomokazu,Kuwahara Kazuhiro,Fuke Shunro,Furukawa Yuzo,Yonezu Hiroo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Advanced transmission electron microscopy investigation of defect formation in movpe-growth of gap on silicon using arsenic initial coverage;Applied Surface Science;2023-02

2. MOVPE growth of GaP on Si with As initial coverage;Journal of Crystal Growth;2017-04

3. Optimum Mg Doping Conditions of GaP Window Layer in 600 nm Multi-Quantum Well AlGaInP Light Emitting Diode;ECS Journal of Solid State Science and Technology;2013

4. Sublattice Rotation of GaP Grown on 2°-Misoriented Si Substrate Using Metalorganic Vapor Phase Epitaxy;Japanese Journal of Applied Physics;2011-02-21

5. Sublattice Rotation of GaP Grown on 2°-Misoriented Si Substrate Using Metalorganic Vapor Phase Epitaxy;Japanese Journal of Applied Physics;2011-02-01

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