Dynamic Characteristics of Metal-Induced Laterally Crystallized Polycrystalline Silicon Thin-Film Transistor Devices and Circuits Fabricated with Asymmetric Precrystallization-Reference-Cited by-同舟云学术

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Dynamic Characteristics of Metal-Induced Laterally Crystallized Polycrystalline Silicon Thin-Film Transistor Devices and Circuits Fabricated with Asymmetric Precrystallization

Published:2009-02-05 Issue:2 Volume:48 Page:020205
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Hwang Wook-Jung,Kang Il-Suk,Yang Jun-Mo,Ahn Chi Won,Seo Hyeon-Sang,Kim Ga-Hee,Hong Soon-Ku

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference9 articles.

1. Recrystallization of amorphized polycrystalline silicon films on SiO2: Temperature dependence of the crystallization parameters

2. 12.2: Large-Area Poly-Si on Glass by UV Scan Heating

3. Low temperature poly-Si thin-film transistor fabrication by metal-induced lateral crystallization

4. Bottom-gated metal-induced laterally crystallized silicon thin-film transistor with self-aligned raised source/drain

5. High-Performance Low-Temperature Poly-Silicon Thin Film Transistors Fabricated by New Metal-Induced Lateral Crystallization Process

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hysteresis suppression improvement of polycrystalline silicon thin-film transistors by two-step hydrogenation;Current Applied Physics;2011-11

2. A Method for Fabricating Practically Channel-Corner-Free Polycrystalline Silicon Thin-Film Transistors;IEEE Transactions on Electron Devices;2011-01

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