Characteristics of N-Type Polycrystalline Silicon Thin Films on Glass Substrates Deposited at Room Temperature by Direct Current Magnetron Sputtering under Substrate Biases
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference17 articles.
1. Direct-current substrate bias effects on amorphous silicon sputter-deposited films for thin film transistor fabrication
2. High rate deposition of poly-Si thin films at low temperature using a new designed magnetron sputtering source
3. Low‐temperature silicon epitaxy by low‐energy bias sputtering
4. An amorphous silicon thin film transistor fabricated at 125 °C by dc reactive magnetron sputtering
5. An approach to device grade amorphous and microcrystalline silicon thin films fabricated at higher deposition rates
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Room temperature synthesis of nanocrystalline silicon by aluminium induced crystallization for solar cell applications;Vacuum;2011-07
2. Crystallization of as-deposited amorphous silicon films on glass prepared by magnetron sputtering with different substrate biases and temperatures;Journal of Crystal Growth;2011-04
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