Atomic Layer Deposition of HfO2onto Si Using Hf(NMe2)4
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference13 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. Chemical vapor deposition and characterization of HfO2 films from organo-hafnium compounds
3. Hafnium oxide gate dielectrics grown from an alkoxide precursor: structure and defects
4. Perfectly Conformal TiN and Al2O3 Films Deposited by Atomic Layer Deposition
5. Atomic layer epitaxy
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1. Interplay of Precursor and Plasma for The Deposition of HfO2 via PEALD: Film Growth and Dielectric Properties;Advanced Materials Interfaces;2023-07-24
2. Influence of temperature and plasma parameters on the properties of PEALD HfO2;Optical Materials Express;2021-06-07
3. Comparative study on atomic layer deposition of HfO2via substitution of ligand structure with cyclopentadiene;Journal of Materials Chemistry C;2020
4. Gallium-containing sulfide binary and ternary materials by atomic layer deposition: precursor reactivities and growth fine chemistries;Materials Today Chemistry;2018-12
5. Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2016-01
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