Growth of Compositionally Graded SiGe Bulk Crystal and Its Application As Substrate with Lateral Variation in Ge Content
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference20 articles.
1. Phase diagram of growth mode for the SiGe/Si heterostructure system with misfit dislocations
2. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
3. Limiting thickness h_{epi} for epitaxial growth and room-temperature Si growth on Si(100)
4. Shape Transition of Germanium Nanocrystals on a Silicon (001) Surface from Pyramids to Domes
5. Pathway for the Strain-Driven Two-Dimensional to Three-Dimensional Transition during Growth of Ge on Si(001)
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Epitaxial growth of SiGe on Si substrate by printing and firing of Al–Ge mixed paste;Japanese Journal of Applied Physics;2019-03-26
2. Types of silicon–germanium (SiGe) bulk crystal growth methods and their applications;Silicon–Germanium (SiGe) Nanostructures;2011
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