Al$_{2}$O$_{3}$ Growth on (100) In$_{0.53}$Ga$_{0.47}$As Initiated by Cyclic Trimethylaluminum and Hydrogen Plasma Exposures
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/4/i=9/a=091102/pdf
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3. $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth
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5. Effects of passivating ionic films on the photoluminescence properties of GaAs
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