RF Performance of AlGaN/GaN High-Electron-Mobility Transistors Grown on Silicon (110)
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/4/i=6/a=064105/pdf
Reference20 articles.
1. AlGaN∕GaN HEMTs on Si(111) with 6.6 W∕mm output power density
2. AlGaN∕GaN HEMTs on Si substrate with 7 W∕mm output power density at 10 GHz
3. 12 W/mm AlGaN–GaN HFETs on Silicon Substrates
4. High-Performance $\hbox{In}_{0.7}\hbox{Ga}_{0.3}\hbox{As}$ -Channel MOSFETs With High-$\kappa$ Gate Dielectrics and $\alpha$-Si Passivation
5. 100 nm gate AlGaN/GaN HEMTs on silicon with fT=90 GHz
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1. DC/RF Performance and Reliability of 100-nm Gate Length AlGaN/GaN MIS-HEMTs with Different Thickness of in-situ SiN;2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT);2023-04-17
2. High fmax × LG Product of AlGaN/GaN HEMTs on Silicon With Thick Rectangular Gate;IEEE Journal of the Electron Devices Society;2020
3. Optical temperature sensing of Er 3+ /Yb 3+ doped LaGdO 3 based on fluorescence intensity ratio and lifetime thermometry;Optical Materials;2018-02
4. Highly efficient upconversion of Er3+ in Yb3+ codoped non-cytotoxic strontium lanthanum aluminate phosphor for low temperature sensors;Scientific Reports;2017-12
5. High f T and f MAX for 100 nm unpassivated rectangular gate AlGaN/GaN HEMT on high resistive silicon (111) substrate;Electronics Letters;2015-08
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