DC/RF Performance and Reliability of 100-nm Gate Length AlGaN/GaN MIS-HEMTs with Different Thickness of in-situ SiN
Author:
Affiliation:
1. International College of Semiconductor Technology, National Yang Ming Chiao Tung University,Taiwan
2. Institute of Pioneer Semiconductor Innovation, National Yang Ming Chiao Tung University,Taiwan
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10133934/10133941/10134287.pdf?arnumber=10134287
Reference11 articles.
1. 101-GHz InAlN/GaN HEMTs on Silicon With High Johnson’s Figure-of-Merit
2. T-Shaped Gate GaN HFETs on Si With Improved Breakdown Voltage and $f_{\rm MAX}$
3. High-Frequency Microwave Noise Characteristics of InAlN/GaN High-Electron Mobility Transistors on Si (111) Substrate
4. RF Performance of In Situ SiNxGate Dielectric AlGaN/GaN MISHEMT on 6-in Silicon-on-Insulator Substrate
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