Experimental Staggered-Source and N+ Pocket-Doped Channel III–V Tunnel Field-Effect Transistors and Their Scalabilities-Reference-Cited by-同舟云学术

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Experimental Staggered-Source and N+ Pocket-Doped Channel III–V Tunnel Field-Effect Transistors and Their Scalabilities

Published:2011-02-09 Issue:2 Volume:4 Page:024105
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Mohata Dheeraj,Mookerjea Saurabh,Agrawal Ashish,Li Yuanyuan,Mayer Theresa,Narayanan Vijaykrishnan,Liu Amy,Loubychev Dmitri,Fastenau Joel,Datta Suman

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/4/i=2/a=024105/pdf

Reference8 articles.

1. Vertical Tunnel Field-Effect Transistor

2. Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec

3. $\hbox{In}_{0.7}\hbox{Ga}_{0.3}\hbox{As}$ Tunneling Field-Effect Transistors With an $I_{\rm on}$ of 50 $\mu\hbox{A}/\mu\hbox{m}$ and a Subthreshold Swing of 86 mV/dec Using $\hbox{HfO}_{2}$ Gate Oxide

4. The Tunnel Source (PNPN) n-MOSFET: A Novel High Performance Transistor

5. Boosting the on-current of a n-channel nanowire tunnel field-effect transistor by source material optimization

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1. Novel III-V inverted T-channel TFET with dual-gate impact on line tunneling, with and without negative capacitance;Microelectronics Journal;2024-09

2. GaAs-on-insulator based vertical heterojunction tunnel FET: proposal and analysis for VLSI circuit applications;Physica Scripta;2024-07-24

3. Performance and reliability assessment of source work function engineered charge plasma based Ti/HfO₂/Al₂O₃/Ge, double gate TFET;Engineering Research Express;2024-05-03

4. 1.65 eV p-AlGaAs/n-GaAs QW/n-AlGaAs Tunnel Junctions with Delta-Doping for Monolithic III–V/Si Tandem Solar Cells;ACS Applied Optical Materials;2024-04-10

5. Investigation of hetero gate oxide hetero stacked triple metal vertical tunnel FET with variable interface trap charges and temperature;Microelectronics Journal;2024-01

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