Direct Observation at Nanoscale of Resistance Switching in NiO Layers by Conductive-Atomic Force Microscopy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/4/i=5/a=051101/pdf
Reference22 articles.
1. Nanoionics-based resistive switching memories
2. Resistive switching in transition metal oxides
3. Resistance switching in the metal deficient-type oxides: NiO and CoO
4. Nanoscale chemical state analysis of resistance random access memory device reacting with Ti
5. Resistance-switching Characteristics of polycrystalline Nb/sub 2/O/sub 5/ for nonvolatile memory application
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