Feasibility Study of Chemically Amplified Resists for Short Wavelength Extreme Ultraviolet Lithography
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/4/i=2/a=026501/pdf
Reference22 articles.
1. Acid generation efficiency in a model system of chemically amplified extreme ultraviolet resist
2. Radiation Chemistry in Chemically Amplified Resists
3. X-Ray Interactions: Photoabsorption, Scattering, Transmission, and Reflection at E = 50-30,000 eV, Z = 1-92
4. Radiation-Induced Acid Generation Reactions in Chemically Amplified Resists for Electron Beam and X-Ray Lithography
5. Modeling and simulation of chemically amplified electron beam, x-ray, and EUV resist processes
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1. The steady flying of a plasmonic flying head over a photoresist-coated surface in a near-field photolithography system;Nanotechnology;2016-03-24
2. Relationship between stochasticity and wavelength of exposure source in lithography;Japanese Journal of Applied Physics;2014-05-19
3. Stochastic Effect on Contact Hole Imaging of Chemically Amplified Extreme Ultraviolet Resists;Japanese Journal of Applied Physics;2013-08-01
4. Resist Materials and Processes for Extreme Ultraviolet Lithography;Japanese Journal of Applied Physics;2013-01-01
5. Resist Properties Required for 6.67 nm Extreme Ultraviolet Lithography;Japanese Journal of Applied Physics;2012-10-01
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