Two-Dimensional Numerical Simulation of Si Schottky/Two-Dimensional Electron Gas Barrier Diode Using Boundary Element Method-Reference-Cited by-同舟云学术

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Two-Dimensional Numerical Simulation of Si Schottky/Two-Dimensional Electron Gas Barrier Diode Using Boundary Element Method

Published:1995-10-15 Issue:Part 1, No. 10 Volume:34 Page:5556-5561
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Luo Ying-Che,Wang Shui-Jinn,Chiou Yueh-Guey,Lin Jia-Chuan,Cheng Ching-Yuan

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Current Flow Mechanisms of Platinum-Silicided p-Type Schottky Barrier MOSFETs;Journal of the Korean Physical Society;2008-10-15

2. Modeling the Electrical Characteristics of Schottky Contacts in Low-Dimensional Heterostructure Devices;IEEE Transactions on Electron Devices;2005-02

3. Simulation of Schottky barrier tunnel transistor using simple boundary condition;Applied Physics Letters;2003-04-21

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