Simulation of Schottky barrier tunnel transistor using simple boundary condition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1569415
Reference13 articles.
1. Suppression of leakage current in Schottky barrier metal–oxide–semiconductor field-effect transistors
2. A 25-nm-long Channel Metal-Gate p-Type Schottky Source/Drain Metal-Oxide-Semiconductor Field Effect Transistor on Separation-by-Implanted-Oxygen Substrate
3. New complimentary metal–oxide semiconductor technology with self-aligned Schottky source/drain and low-resistance T gates
4. Experimental investigation of a PtSi source and drain field emission transistor
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