A Comparison of the Growth of GaAs and GaP from Trimethyl-Gallium-Reference-Cited by-同舟云学术

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A Comparison of the Growth of GaAs and GaP from Trimethyl-Gallium

Published:1995-02-15 Issue:Part 1, No. 2A Volume:34 Page:434-441
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Weyers Markus,Sato Michio

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Shape, Size Evolution, and Nucleation Mechanisms of GaAs Nanoislands Grown on (111)Si by Low-Temperature Metal–Organic Vapor-Phase Epitaxy;Crystal Growth & Design;2019-08-13

2. Precursors to Semiconducting Materials;Comprehensive Organometallic Chemistry III;2007

3. In situ study of GaAs growth mechanisms using tri-methyl gallium and tri-ethyl gallium precursors in metal-organic vapour phase epitaxy;Journal of Crystal Growth;2004-02

4. Unintentional carbon and hydrogen incorporation in GaNP grown by metal-organic chemical vapor deposition;Journal of Crystal Growth;2003-12

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