In situ study of GaAs growth mechanisms using tri-methyl gallium and tri-ethyl gallium precursors in metal-organic vapour phase epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference23 articles.
1. The Use of Metal-Organics in the Preparation of Semiconductor Materials
2. Organometallic Vapour-Phase Epitaxy: Theory and Practice;Stringfellow,1989
3. THE PYROLYSIS OF TRIMETHYL GALLIUM
4. Diagnostics of Gas Reaction Using Trimethylgallium-AsH3and Triethylgallium-AsH3in Low-Pressure Organometallic Vapor Phase Epitaxy
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