Diagnostics of Gas Reaction Using Trimethylgallium-AsH3and Triethylgallium-AsH3in Low-Pressure Organometallic Vapor Phase Epitaxy-Reference-Cited by-同舟云学术

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Diagnostics of Gas Reaction Using Trimethylgallium-AsH3and Triethylgallium-AsH3in Low-Pressure Organometallic Vapor Phase Epitaxy

Published:1987-12-20 Issue:Part 1, No. 12 Volume:26 Page:2002-2008
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Horiguchi Seishi,Kimura Kōzō,Takagishi Shigenori,Kamon Koichi,Mashita Masao,Mihara Minoru,Ishii Makoto

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of a GaN Cap Layer on the Morphology and the Physical Properties of Embedded Self-Organized InN Quantum Dots on GaN(0001) Grown by Metal–Organic Vapour Phase Epitaxy;Japanese Journal of Applied Physics;2011-03-22

2. Influence of a GaN Cap Layer on the Morphology and the Physical Properties of Embedded Self-Organized InN Quantum Dots on GaN(0001) Grown by Metal–Organic Vapour Phase Epitaxy;Japanese Journal of Applied Physics;2011-03-01

3. Impact of CBr4, V/III ratio, temperature and AsH3 concentration on MOVPE growth of GaAsSb:C;Journal of Crystal Growth;2009-03

4. In situ study of GaAs growth mechanisms using tri-methyl gallium and tri-ethyl gallium precursors in metal-organic vapour phase epitaxy;Journal of Crystal Growth;2004-02

5. A comparison of TMG with TEG for the growth of InxGa1−xAs;Journal of Electronic Materials;2000-01

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